IRLD024PBF MOSFET, N-Ch 60V 2.5A 0.1R, HVMDIP

IRLD024, Power MOSFET

Description: Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Features: - Dynamic dV/dt Rating - For Automatic Insertion - End Stackable - Logic-Level Gate Drive - RDS(on) Specified at VGS = 4 V and 5 V - 175 °C Operating Temperature - Fast Switching - Compliant to RoHS Directive 2002/95/EC