4pin (25) » Noty katalogowe | elecena.pl - wyszukiwarka elementów elektronicznych

IKY120N120CH7

1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS 4pin package Hard-switching 1200 V, 120 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS 4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers. In addition, Kelvin emitter pin brings additional reduction of total switching losses compared to 3 pin.

Producent:: Infineon
Rozmiar:: 1748 kB
Stron:: 17

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IKY100N120CH7

1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package Hard-switching 1200 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.

Producent:: Infineon
Rozmiar:: 1712 kB
Stron:: 17

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IKY140N120CH7

1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package Hard-switching 1200 V, 140 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.

Producent:: Infineon
Rozmiar:: 1699 kB
Stron:: 17

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IKY75N120CH7

1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.

Producent:: Infineon
Rozmiar:: 1660 kB
Stron:: 17

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IMZC120R040M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 40 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Producent:: Infineon
Rozmiar:: 1488 kB
Stron:: 18

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IMZC120R017M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Producent:: Infineon
Rozmiar:: 1457 kB
Stron:: 18

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IMZC120R022M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 22 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Producent:: Infineon
Rozmiar:: 1443 kB
Stron:: 18

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IMZC120R078M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 78 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Producent:: Infineon
Rozmiar:: 1440 kB
Stron:: 18

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IMZC120R026M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 26 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Producent:: Infineon
Rozmiar:: 1436 kB
Stron:: 18

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IMZC120R053M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 53 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Producent:: Infineon
Rozmiar:: 1436 kB
Stron:: 18

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IMZC120R012M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 12 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Producent:: Infineon
Rozmiar:: 1434 kB
Stron:: 18

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IMZC140R038M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 38 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

Producent:: Infineon
Rozmiar:: 1377 kB
Stron:: 18

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IMZC140R019M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 19 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

Producent:: Infineon
Rozmiar:: 1373 kB
Stron:: 18

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IMZC120R034M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 34 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Producent:: Infineon
Rozmiar:: 1359 kB
Stron:: 18

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IMZC140R024M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 24 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

Producent:: Infineon
Rozmiar:: 1356 kB
Stron:: 18

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IMZC120R007M2H

CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC

Producent:: Infineon
Rozmiar:: 1354 kB
Stron:: 18

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IMZC140R029M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 29 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

Producent:: Infineon
Rozmiar:: 1354 kB
Stron:: 18

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IMZC140R011M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 11 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app