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    JANSR2N7584D4

    JANSR2N7584D4 is a rad hard, 200V, 35A, N-channel MOSFET in a TO-257AA tabless low ohmic package. It has low RDS(on), low gate charge, and is characterized for both Total Dose and Single Event Effect with useful performance up to LET of 90 MeV·cm2/mg. This R6 MOSFET is ideal for switching applications like space DC-DC converters and motor controllers.
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    IRHF7110SCS

    IRHF7110SCS in R4 technology offers a high-performance, rad hard N-channel MOSFET in a TO-205AF package. With a 200V voltage rating and 3.5V gate threshold, this device is ideal for space applications, featuring low RDS(on) and gate charge for reduced power losses during switching. Its electrical performance is characterized up to 100krad(Si) TID and up to LET of 90MeV·cm2/mg, while retaining the advantages of MOSFETs.
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    RDHA701FP10A8QP

    IR HiRel's RDHA701FP10A8QP is a 100V 1.3A rad hard solid state relay with an octal pole, single throw normally open configuration in a 64-pin flatpack package. It is characterized for 100kRad(Si) TID and can be actuated by an input voltage or current (depending on the model). These compact and hermetic relays are ideal for various applications.
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    1339 kB
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    11
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    IRHM7250SESCS

    This N-channel MOSFET, IRHM7250SESCS, is a single, high performance power device designed for space applications. With a voltage rating of 200V, it features low RDS(on) and low gate charge, making it ideal for DC-DC converters and motor control. The device is rad hard and has been characterized for Total Dose and Single Event Effects (SEE), with electrical performance up to 100krad(Si) TID. This COTS part comes in a standard TO-254AA package.
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    1175 kB
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    8
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    IRH7150

    IRH7150 is a 100V, 34A rad hard R4 N-channel MOSFET. This R4 device is hermetically packaged in a TO-204AE and offers decades of proven performance and reliability in satellite applications. Characterized for Total Dose up to 100Krad(Si) and Single Event Effects (SEE), this COTS part is manufactured on a MIL-PRF-19500 line. Ideal for in switching applications such as motor control and DC-DC converters in space power system designs.
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    13
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    JANSR2N7588T3

    The JANSR2N7588T3 N-channel MOSFET provides a reliable solution for space applications. With a voltage rating of 100V and current rating of 20A, these rad hard R6 MOSFETs have been characterized for Total Dose and Single Event Effects. Their low RDS(on) and gate charge minimize power losses in switching applications, and they offer voltage control and fast switching.
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    1073 kB
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    14
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    IRHF57230SE

    IRHF57230SE is a rad hard N-channel MOSFET with 200V and 7A ratings. The single MOSFET is packaged in TO-205AF and characterized for both Total Dose and Single Event Effects. With low RDS(on) and low gate charge, it reduces power losses in switching applications and is a perfect fit for space applications.
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    1059 kB
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    13
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    IRHNS7460SESCS

    This R4 N-channel MOSFET in a SupIR-SMD package is a rad hard, 500V, 12A device for space applications. Its IR HiRel rad hard HEXFET technology provides high performance and reliability in satellite applications, with low RDS(on) and low gate charge for reduced power losses. Characterized for both Total Dose and Single Event Effects (SEE), this QIRL device offers electrical performance up to 100krad(Si) TID.
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    1034 kB
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    8
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    IRHY67C30CSCS

    The IRHY67C30CSCS R6 N-channel MOSFET is a rad-hard device with 600V and 3.4A capabilities. Its superior power technology provides improved power density and faster switching times for high speed switching applications. With low RDS(on) and high immunity to SEE, this QIRL device is ideal for space applications. It's characterized for LET up to 90MeV·cm2/mg and electrical performance up to 100krad(Si) TID.
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    1018 kB
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    8
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    IRHNJ57034SCSA

    The rad hard N-channel MOSFET IRHNJ57034SCSA in a SMD-0.5 package is a 60V, 22A high-performance power MOSFET designed for space applications. It is characterized for Total Dose and Single Event Effects (SEE) and is QPL qualified. With low RDS(on) and low gate charge, this R5 device reduces power losses in switching applications in satellite bus and payload power systems.
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    862 kB
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    13
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    JANSR2N7561T2

    The rad hard N-channel MOSFET JANSR2N7561T2 offers up to 250V and 5.4A in a TO-205AF package. QPL qualification makes it ideal for space applications. With low RDS(on) and gate charge, this R5 MOSFET reduces power losses in switching applications. It's characterized for both Total Dose and Single Event Effects (SEE) and has proven performance and reliability in satellite applications.
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    828 kB
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    13
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    IRHYS67134CMSCS

    The IRHYS67134CMSCS R6 N-channel MOSFET is a rad hard device with a TO-257AA tabless low ohmic package. It has a maximum voltage of 150V and a maximum current rating of 19A. This MOSFET has been characterized for both Total Dose and Single Event Effect, making it suitable for space applications. With low RDS(on) and low gate charge, it reduces power losses in switching applications.
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    803 kB
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    14
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    JANSR2N7649T3

    JANSR2N7649T3 is a single rad hard R9 N-channel MOSFET with 250V, 17A capability. Its low RDS(on) and improved immunity to SEE make it ideal for high speed switching applications. In a TO-257AA low ohmic, this QPL-qualified MOSFET is ideal for space satellite bus and payload power systems, characterized up to 90MeV·cm2/mg LET and up to 100krad(Si) TID.
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    720 kB
    Stron:
    15
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    JANSF2N7470T1

    The JANSF2N7470T1 R5 N-channel MOSFET is a radiation-hardened device designed for space applications. It has a high voltage rating of 60V and a current rating of 45A. The low RDS(on) and low gate charge make it ideal for DC-DC converters and motor control. The device also features electrical performance up to 300krad(Si) TID and has been characterized for Single Event Effects (SEE).
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    718 kB
    Stron:
    13
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    RIC74424HSCS

    RIC74424HSCS is a rad hard high speed, dual channel low side gate driver designed for space and harsh radiation environments. Electrical performance is characterized pre and post-irradiation over the entire military specification ambient temperature range of -55°C to 125°C. SEE characterized up to a linear energy transfer (LET) of 81.9 MeV·cm2/mg. This device is screened to MIL-PRF-38535 Level S and comes in a hermetic 8-pin flatpack.
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    704 kB
    Stron:
    21
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    IRHYK57133CMSE

    IRHYK57133CMSE R5 N-channel MOSFET is a rad hard device with 130V and 20A rating. Housed in a TO-257AA tabless low ohmic package, it has electrical performance up to 100krad(Si) TID. The low RDS(on) and gate charge reduce power losses in switching applications. It offers MOSFET advantages like voltage control, fast switching, and temperature stability. SEE characterized performance up to an LET of 80 MeV·cm2/mg.
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    699 kB
    Stron:
    13
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    RIC7S113L4SCS

    RIC7S113L4SCS is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Designed for harsh radiation environments such as space, with electrical performance up to 100 krad(Si) TID and SEE characterized up to LET of 81.9 MeV·cm2/mg. MIL-PRF-38535 Level S screening in a MO-036AB CIC package.
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    485 kB
    Stron:
    28
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    JANSR2N7648T3

    JANSR2N7648T3 is a 100V, 30A rad hard R9 N-channel MOSFET in a TO-257AA low ohmic package. Designed for space applications, its low RDS(on) and faster switching times increase power density and reduce power losses in high-speed switching applications in satellite bus and payload systems. This QPL qualified device has improved immunity SEE and is characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
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    444 kB
    Stron:
    9
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    IRHF67234SCS

    IRHF67234SCS R6 N-channel MOSFET is space-qualified with 250V voltage and 9.5A current rating. This single N-channel design comes in a TO-205AF package. Characterized for Total Dose and SEE with LET of 90 MeV·cm2/mg. These MOSFETs provide high power switching with low RDS(on) and gate charge. Ideal for space applications with voltage control, fast switching, and temperature stability of electrical parameters.
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    402 kB
    Stron:
    9
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    RDHA710SE10A2FP

    The RDHA710SE10A2FP is a 100V 10A rad hard solid state relay with a dual pole, single throw normally open configuration in a 8-pin surface mount package. It is characterized for 100kRad(Si) TID and features fast response times.The device is optically coupled and actuated by standard logic inputs. It is the unscreened version of RDHA710SE10A2FK.
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    396 kB
    Stron:
    11
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    IRHMS6S7264SCS

    IRHMS6S7264SCS R6 N-channel MOSFET is a QIRL-grade, rad hard MOSFET for space applications with 200V and 45A. Its low RDS(on) and gate charge reduce power losses in switching applications like DC-DC converters and motor controllers. Retaining all advantages of MOSFETs, this device is characterized for Total Dose and Single Event Effect up to LET of 90 MeV·cm2/mg.
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    388 kB
    Stron:
    9
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    RDHA701CD10A2NX

    IR HiRel's RDHA701CD10A2NX is a 100V 1A rad hard solid state relay with a dual pole, single throw normally open configuration in a 8-pin ceramic package. It is characterized for 100KRad (Si) total ionizing dose and features an output MOSFET that utilizes IR HiRel R5 technology. The device is screened to MIL-PRF-38534 and is capable of operating in the harsh space environment.
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    303 kB
    Stron:
    9
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    IRHN57250SESCS

    The IRHN57250SESCS R5 N-channel MOSFET is a 200V, 31A rad hard device for space applications. Featuring low RDS(on) and a low gate charge, it reduces power losses and maintains established MOSFET benefits such as voltage control, fast switching, and temperature stability. Characterized for SEE up to LET 80 MeV·cm2/mg with a QIRL classification, it is available in a SMD-1 package.
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    177 kB
    Stron:
    8
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    IRHMK597160SCS

    IRHMK597160SCS is a R5, rad hard, -100V, -45A, single, P-channel MOSFET in a TO-254AA Tabless SMD package. With electrical performance up to 100krad(Si) TID and QIRL classification, these MOSFETs reduce power loss in switching applications and have been characterized for Total Dose and Single Event Effect (SEE) up to LET of 80 (MeV/(mg/cm2)). With low RDS(on) and low gate charge, they retain all advantages of MOSFETs for space applications.
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    176 kB
    Stron:
    8
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    RDHA720SF06A1NP

    The RDHA720SF06A1NP is a 60V 20A rad hard solid state relay with a single-pole-single-throw (SPST) normally open configuration in a 8-pin surface mount package. It has standard packaging, is characterized for 100 krad(Si) total ionizing dose and utilizes IR HiRel's R5 MOSFET technology for its input and output MOSFETs. This device is the unscreened version of RDHA720SF06A1NK.
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    Rozmiar:
    111 kB
    Stron:
    7