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    IGB110S10S1Q

    CoolGaN™ Automotive Transistor 100 V G1 in PQFN 3x3, 11 mΩ The IGB110S10S1Q is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. The device is qualified according to the AEC-Q101 standard and thanks to its low on-state resistance, it is the ideal choice for reliable performance in a broad range of automotive applications.
    Producent:
    Infineon
    Rozmiar:
    4990 kB
    Stron:
    17