650 V, 75 A trench field-stop IGBT with full rated silicon diode
Nexperia
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- NGW75T65M3DFP
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- Nexperia
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Sugerowane produkty dla ngw75t65m3dfp
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu Nexperia