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20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro

Texas Instruments

20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro RSS Sample
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MPN:
CSD85302L
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This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.

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