VCO SMT with Fo/2 & Divide-by-4, 11.5 - 12.8 GHz

The HMC583LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC583LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5×5 mm surface mount package, and requires no external matching components.

APPLICATIONS

* Point to Point/Multipoint Radio

* Test Equipment & Industrial Controls

* SATCOM

* Military End-Use

* Dual Output: Fo = 11.5 - 12.8 GHz

Fo/2 = 5.75 - 6.4 GHz

* Pout: +11 dBm