InGaP HBT Power Amplifier SMT, 4.9 - 5.9 GHz

The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.

Applications

* 802.11a WLAN

* HiperLAN WLAN

* Access Points

* UNII & ISM Radios

* Gain: 20 dB

* 34% PAE @ Psat = +26 dBm

* 3.7% EVM @ Pout = +15 dBm

* with 54 Mbps OFDM Signal

* Supply Voltage: +3 V

* Power Down Capability

* Low External Part Count