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117 43.21 PLN 2093.03 PLN
  1. Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V Sample
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    Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V

    The A2I35H060N wideband integrated circuit is an ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    A2I35H060GN
    Obudowa:
    SOT1730
    Dodany:
  2. Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V Sample
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    Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V

    The MMRF2010N and MMRF2010GN are 2-stage RFICs ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    MMRF2010GN
    Obudowa:
    SOT1720
    Dodany:
  3. Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V Sample
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    Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V

    The A2T09VD250NR1 65 W RF power LDMOS transistor ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    A2T09VD250N
    Obudowa:
    SOT1740
    Dodany:
  4. Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V Sample
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    Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V

    The A2G35S200-01SR3 40 W RF power GaN transistor ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    A2G35S200-01S
    Obudowa:
    SOT1828
    Dodany:
  5. Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V Sample
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    Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V

    The AFT20S015NR1 and AFT20S015GNR1 1.5 W RF power ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    AFT20S015N
    Obudowa:
    SOT1732
    Dodany:
  6. Sample
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    Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V

    The AFV09P350-04NR3 and AFV09P350-04GNR3 100 W ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    AFV09P350-04GN
    Obudowa:
    SOT1825
    Dodany:
  8. Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V Sample
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    Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V

    These RF power devices, AFV141KH, AFV141KHS and ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    AFV141KH
    Obudowa:
    SOT1787
    Dodany:
  9. Sample
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    Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V

    The A2T08VD020NT1 2 W RF power LDMOS transistor is ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    A2T08VD020N
    Obudowa:
    SOT1664
    Dodany:
  10. Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V Sample
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    Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V

    The A2G22S251-01SR3 48 W RF power GaN transistor ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    A2G22S251-01S
    Obudowa:
    SOT1828
    Dodany:
  11. Sample
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    Airfast RF Power LDMOS Transistor, 720-960 MHz, 79 W Avg., 48 V

    The A2V09H300-04NR3 79 W asymmetrical Doherty RF ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    A2V09H300-04N
    Obudowa:
    SOT1818
    Dodany:
  12. Sample
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    Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V

    The avionics AFIC10275N and AFIC10275GN are a 2- ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    AFIC10275N
    Obudowa:
    SOT1720
    Dodany:
  13. Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V Sample
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    Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V

    The AFT09MS031NR1 and AFT09MS031GNR1 are designed ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    AFT09MS031GN
    Obudowa:
    SOT1731
    Dodany:
  14. Sample
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    Airfast RF Power LDMOS Transistor, 720-960 MHz, 102 W Avg., 48 V

    This 102 W asymmetrical Doherty RF power LDMOS ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    A2V09H400-04S
    Obudowa:
    SOT1826
    Dodany:
  15. Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 6.3 W Avg., 28 V Sample
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    Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 6.3 W Avg., 28 V

    The A3I20X050N integrated Doherty circuit is ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    A3I20X050GN
    Dodany:
  16. Sample
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    Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V

    The A2V09H525-04N 120 W asymmetrical Doherty RF ...
    • Darmowa próbka
    Sklep:
    NXP
    Producent:
    NXP
    MPN:
    A2V09H525-04N
    Obudowa:
    SOT1816
    Dodany: